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芯奇士电子

  • image of 氮化镓 (GaN) IC>LMG2100R044
  • image of 氮化镓 (GaN) IC>LMG2100R044
LMG2100R044
氮化镓 (GaN) IC
TI
100-V 4.4-mΩ
-
WQFN-FCRLF (RAR)
5000
-
image of 氮化镓 (GaN) IC>LMG2100R044
image of 氮化镓 (GaN) IC>LMG2100R044
LMG2100R044
LMG2100R044
氮化镓 (GaN) IC
TI
100-V 4.4-mΩ
-
WQFN-FCRLF (RAR)
5000
-
TYPEDESCRIPTION
VDS (max) (V)100
RDS(on) (mΩ)4.4
ID (max) (A)35
FeaturesBuilt-in bootstrap diode, Half-bridge, Top-side cooled
RatingCatalog
Operating temperature range (°C)-40 to 125
VDS (max) (V)100
RDS(on) (mΩ)4.4
ID (max) (A)35
FeaturesBuilt-in bootstrap diode, Half-bridge, Top-side cooled
RatingCatalog
Operating temperature range (°C)-40 to 125
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