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芯奇士电子
| ： | LMG2610 |
|---|---|
| ： | 氮化镓 (GaN) IC |
| ： | TI |
| ： | 650-V 170/248-m |
| ： | - |
| ： | VQFN (RRG) |
| ： | 5000 |
| ： | - |
| TYPE | DESCRIPTION |
| VDS (max) (V) | 650 |
| RDS(on) (mΩ) | 170 |
| ID (max) (A) | 5.4 |
| Features | Bottom-side cooled, Built-in bootstrap diode, Cycle-by-cycle overcurrent protection, Half-bridge, Overtemperature protection |
| Rating | Catalog |
| Operating temperature range (°C) | -40 to 150 |
| VDS (max) (V) | 650 |
| RDS(on) (mΩ) | 170 |
| ID (max) (A) | 5.4 |
| Features | Bottom-side cooled, Built-in bootstrap diode, Cycle-by-cycle overcurrent protection, Half-bridge, Overtemperature protection |
| Rating | Catalog |
| Operating temperature range (°C) | -40 to 150 |
