: | LMG3410R150 |
---|---|
: | 氮化镓 (GaN) IC |
: | TI |
: | 600-V 150-mΩ |
: | - |
: | VQFN (RWH) |
: | 5000 |
: | - |
TYPE | DESCRIPTION |
VDS (max) (V) | 600 |
RDS(on) (mΩ) | 150 |
ID (max) (A) | 6 |
Features | Bottom-side cooled, Latched overcurrent protection, Overtemperature protection |
Rating | Catalog |
Operating temperature range (°C) | -40 to 150 |
VDS (max) (V) | 600 |
RDS(on) (mΩ) | 150 |
ID (max) (A) | 6 |
Features | Bottom-side cooled, Latched overcurrent protection, Overtemperature protection |
Rating | Catalog |
Operating temperature range (°C) | -40 to 150 |