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芯奇士电子

  • image of 氮化镓 (GaN) IC>LMG3411R150
  • image of 氮化镓 (GaN) IC>LMG3411R150
  • image of 氮化镓 (GaN) IC>LMG3411R150
  • image of 氮化镓 (GaN) IC>LMG3411R150
LMG3411R150
氮化镓 (GaN) IC
TI
600-V 150-mΩ
-
VQFN (RWH)
5000
-
LMG3411R150
德州仪器-TI
SEM
LMG3411R150
德州仪器-TI
SEM
LMG3411R150
德州仪器-TI
LMG3411R150
德州仪器-TI
SEM
image of 氮化镓 (GaN) IC>LMG3411R150
image of 氮化镓 (GaN) IC>LMG3411R150
image of 氮化镓 (GaN) IC>LMG3411R150
LMG3411R150
LMG3411R150
氮化镓 (GaN) IC
TI
600-V 150-mΩ
-
VQFN (RWH)
5000
-
TYPEDESCRIPTION
VDS (max) (V)600
RDS(on) (mΩ)150
ID (max) (A)6
FeaturesBottom-side cooled, Cycle-by-cycle overcurrent protection, Overtemperature protection
RatingCatalog
Operating temperature range (°C)-40 to 150
VDS (max) (V)600
RDS(on) (mΩ)150
ID (max) (A)6
FeaturesBottom-side cooled, Cycle-by-cycle overcurrent protection, Overtemperature protection
RatingCatalog
Operating temperature range (°C)-40 to 150
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