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芯奇士电子

  • image of 氮化镓 (GaN) IC>LMG3526R030
  • image of 氮化镓 (GaN) IC>LMG3526R030
  • image of 氮化镓 (GaN) IC>LMG3526R030
  • image of 氮化镓 (GaN) IC>LMG3526R030
  • image of 氮化镓 (GaN) IC>LMG3526R030
  • image of 氮化镓 (GaN) IC>LMG3526R030
LMG3526R030
氮化镓 (GaN) IC
TI
650-V 30-mΩ G
-
VQFN
5000
-
image of 氮化镓 (GaN) IC>LMG3526R030
image of 氮化镓 (GaN) IC>LMG3526R030
image of 氮化镓 (GaN) IC>LMG3526R030
image of 氮化镓 (GaN) IC>LMG3526R030
LMG3526R030
LMG3526R030
氮化镓 (GaN) IC
TI
650-V 30-mΩ G
-
VQFN
5000
-
TYPEDESCRIPTION
VDS (max) (V)650
RDS(on) (mΩ)30
ID (max) (A)55
FeaturesCycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting, Top-side cooled, Zero voltage detection
RatingCatalog
Operating temperature range (°C)-40 to 150
VDS (max) (V)650
RDS(on) (mΩ)30
ID (max) (A)55
FeaturesCycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting, Top-side cooled, Zero voltage detection
RatingCatalog
Operating temperature range (°C)-40 to 150
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