TYPE | DESCRIPTION |
Number of channels | 4 |
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 36 |
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 2.7 |
Rail-to-rail | In to V-, Out |
GBW (typ) (MHz) | 3 |
Slew rate (typ) (V/µs) | 1.5 |
Vos (offset voltage at 25°C) (max) (mV) | 1.8 |
Iq per channel (typ) (mA) | 0.475 |
Vn at 1 kHz (typ) (nV√Hz) | 14 |
Rating | Catalog |
Operating temperature range (°C) | -40 to 125 |
Offset drift (typ) (µV/°C) | 0.3 |
Features | EMI Hardened |
Input bias current (max) (pA) | 15 |
CMRR (typ) (dB) | 120 |
Iout (typ) (A) | 0.025 |
Architecture | CMOS |
Input common mode headroom (to negative supply) (typ) (V) | -0.1 |
Input common mode headroom (to positive supply) (typ) (V) | -2 |
Output swing headroom (to negative supply) (typ) (V) | 0.03 |
Output swing headroom (to positive supply) (typ) (V) | -0.35 |
Number of channels | 4 |
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 36 |
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 2.7 |
Rail-to-rail | In to V-, Out |
GBW (typ) (MHz) | 3 |
Slew rate (typ) (V/µs) | 1.5 |
Vos (offset voltage at 25°C) (max) (mV) | 1.8 |
Iq per channel (typ) (mA) | 0.475 |
Vn at 1 kHz (typ) (nV√Hz) | 14 |
Rating | Catalog |
Operating temperature range (°C) | -40 to 125 |
Offset drift (typ) (µV/°C) | 0.3 |
Features | EMI Hardened |
Input bias current (max) (pA) | 15 |
CMRR (typ) (dB) | 120 |
Iout (typ) (A) | 0.025 |
Architecture | CMOS |
Input common mode headroom (to negative supply) (typ) (V) | -0.1 |
Input common mode headroom (to positive supply) (typ) (V) | -2 |
Output swing headroom (to negative supply) (typ) (V) | 0.03 |
Output swing headroom (to positive supply) (typ) (V) | -0.35 |