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  • image of Bipolar RF Transistors>PN3563
  • image of Bipolar RF Transistors>PN3563
Model PN3563
Product Category Bipolar RF Transistors
Manufacturer Fairchild Semiconductor
Description RF SMALL SIGNAL
Encapsulation -
Package Bulk
RoHS Status 1
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image of Bipolar RF Transistors>11559662
11559662
Model
11559662
Product Category
Bipolar RF Transistors
Manufacturer
Fairchild Semiconductor
Description
RF SMALL SIGNAL
Encapsulation
-
Package
Bulk
lang_roHSStatusStatus
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrFairchild Semiconductor
Series-
PackageBulk
Product StatusOBSOLETE
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Gain14dB ~ 26dB
Power - Max350mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 8mA, 10V
Frequency - Transition1.5GHz
Supplier Device PackageTO-92-3
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