Language:en 
- zh-cn
- en
AEF
| Model： | G3R40MT12D |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | GeneSiC Semiconductor |
| Description： | SIC MOSFET N-CH |
| Encapsulation： | - |
| Package： | Tube |
| Quantity： | 2732 |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$8.7100
$8.7100
10
$7.9500
$79.5000
25
$7.6650
$191.6250
100
$7.2600
$726.0000
250
$7.0000
$1,750.0000
500
$6.8100
$3,405.0000
| TYPE | DESCRIPTION |
| Mfr | GeneSiC Semiconductor |
| Series | G3R™ |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 35A, 15V |
| Power Dissipation (Max) | 333W (Tc) |
| Vgs(th) (Max) @ Id | 2.69V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2929 pF @ 800 V |
